| Boris Gelmont | | Research Associate Professor, Electrical and Computer Engineering | | D.Sc., Ioffe Institute of Physics and Technology | , Ioffe Institute of Physics and Technology| | | Dr. Gelmont has served on the faculty since 1990. He has published more than 200 papers. He is a senior member of IEEE and a member of the IEEE Electron Devices Society and the International Union of Radio Science. He previously conducted research at the Ioffe Institute of Physics and Technology and taught at the Polytechnic University in Leningrad, Russia. He was awarded the State Prize, Russia's highest scientific award, for his work on the theory of narrow-band and zero-band gap semiconductors. | | | | Research Interests | | Boris Gelmont's present research area includes theoretical aspects of electronic materials and devices, theory of novel semiconductor devices (resonant tunneling diodes, quantum cascade lasers), modeling of devices (field effect transistors, Schottky diodes), and transport and optical properties of semiconductors. | | |
Sponsored Research
Simulation, Fabrication and Characterization of Terahertz Frequency Sources (funded by: U.S. Army Research Office)
Polar-Optical-Phonon Enhancement of Nonlinear Effects at the Schottky Barrier Interface (funded by: National Science Foundation)
The Science and Technology of Nano/Molecular Electronics: Theory, Simulation, and Experimental Characterization (funded by: subcontract from SIT)
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