Past REU Participants & Project Pages

2006 REU Porjects
2006 REU Projects
2006 Participant: Thomas Woodson
Project Title: Characterization and Implementation of Silicon Nitride Film using Plasma Enhanced Chemical Vapor Deposition

Faculty Advisor:Lloyd Harriott
To grow Si3N4 a “recipe” has to be inputted into the PECVD system. The recipe sets the temperature, pressure, power, gas composition, and duration of the process. Depending on the parameters the PEVCD will grow different types of insulating films with different characteristics. Once the film is grown, there are a wide variety of tests that it can undergo to determine the film quality. I chose to test the deposition rate, etch rate, sideways etch rate, and leakage current.
  • Growth Rate:
    • As he increased the deposition time, the deposition rate decreased slightly, but stayed fairly linear.
  • Etch Rate:
    • At low deposition times, the film appeared to etch very fast. However, the film was too thin to get an accurate measurement. At longer deposition times the etch rate appeared to be stable.
  • Sideways Etch:
    • The samples had no significant sideways etch. Using the Tencor profiler, there was no evidence that the BOE etch excessively to the side.
  • Leakage Current:
    • The leakage current of 110 nanometers of silicon nitride was about 200 picoamps.
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